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Other articles related with "epitaxial graphene"：
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98102 |
Yi Biao(表奕), Hong-Liang Lu(路红亮), Hao Peng(彭浩), Zhi-Peng Song(宋志朋), Hui Guo(郭辉), and Xiao Lin(林晓) |
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Intercalation of hafnium oxide between epitaxially-grown monolayer graphene and Ir(111) substrate |
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Chin. Phys. B
2023 Vol.32 (9): 98102-098102
[Abstract]
(105)
[HTML 1 KB]
[PDF 947 KB]
(79)
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68103 |
Wen-Xia Kong(孔雯霞), Yong Duan(端勇), Jin-Zhe Zhang(章晋哲),Jian-Xin Wang(王剑心), and Qun Cai(蔡群) |
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Morphological features and nanostructures generated during SiC graphitization process |
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Chin. Phys. B
2023 Vol.32 (6): 68103-068103
[Abstract]
(153)
[HTML 0 KB]
[PDF 2999 KB]
(60)
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66103 |
Mingmin Yang(杨明敏), Yong Duan(端勇), Wenxia Kong(孔雯霞), Jinzhe Zhang(章晋哲), Jianxin Wang(王剑心), and Qun Cai(蔡群) |
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Er intercalation and its impact on transport properties of epitaxial graphene |
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Chin. Phys. B
2023 Vol.32 (6): 66103-066103
[Abstract]
(137)
[HTML 0 KB]
[PDF 1080 KB]
(37)
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67206 |
Ze-Zhao He(何泽召), Ke-Wu Yang(杨克武), Cui Yu(蔚翠), Qing-Bin Liu(刘庆彬), Jing-Jing Wang(王晶晶), Jia Li(李佳), Wei-Li Lu(芦伟立), Zhi-Hong Feng(冯志红), Shu-Jun Cai(蔡树军) |
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High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate |
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Chin. Phys. B
2016 Vol.25 (6): 67206-067206
[Abstract]
(634)
[HTML 1 KB]
[PDF 941 KB]
(397)
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67205 |
Jiao Huang(黄郊), Li-Wei Guo(郭丽伟), Wei Lu(芦伟), Yong-Hui Zhang(张永晖), Zhe Shi(史哲), Yu-Ping Jia(贾玉萍), Zhi-Lin Li(李治林), Jun-Wei Yang(杨军伟), Hong-Xiang Chen(陈洪祥), Zeng-Xia Mei(梅增霞), Xiao-Long Chen(陈小龙) |
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A self-powered sensitive ultraviolet photodetector based on epitaxial graphene on silicon carbide |
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Chin. Phys. B
2016 Vol.25 (6): 67205-067205
[Abstract]
(1069)
[HTML 1 KB]
[PDF 510 KB]
(464)
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76103 |
Wang Dang-Chao (王党朝), Zhang Yu-Ming (张玉明) |
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Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC (0001) substrates |
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Chin. Phys. B
2014 Vol.23 (7): 76103-076103
[Abstract]
(366)
[HTML 1 KB]
[PDF 2695 KB]
(426)
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76804 |
Hao Xin (郝昕), Chen Yuan-Fu (陈远富), Wang Ze-Gao (王泽高), Liu Jing-Bo (刘竞博), He Jia-Rui (贺加瑞), Li Yan-Rong (李言荣) |
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Significant photoelectrical response of epitaxial graphene grown on Si-terminated 6H-SiC |
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Chin. Phys. B
2013 Vol.22 (7): 76804-076804
[Abstract]
(563)
[HTML 1 KB]
[PDF 1419 KB]
(650)
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38102 |
Wang Dang-Chao(王党朝), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Lei Tian-Min(雷天民), Guo Hui(郭辉), Wang Yue-Hu(王悦湖), Tang Xiao-Yan(汤晓燕), and Wang Hang(王航) |
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Comparison of the formation process and properties of epitaxial graphenes on Si- and C-face 6H–SiC substrates |
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Chin. Phys. B
2012 Vol.21 (3): 38102-038102
[Abstract]
(1025)
[HTML 1 KB]
[PDF 267 KB]
(699)
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46801 |
Hao Xin(郝昕), Chen Yuan-Fu(陈远富), Li Ping-Jian(李萍剑), Wang Ze-Gao(王泽高), Liu Jing-Bo(刘竞博), He Jia-Rui(贺加瑞), Fan Rui(樊睿), Sun Ji-Rong(孙继荣), Zhang Wan-Li(张万里), and Li Yan-Rong(李言荣) |
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Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) wafers |
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Chin. Phys. B
2012 Vol.21 (4): 46801-046801
[Abstract]
(1289)
[HTML 1 KB]
[PDF 201 KB]
(651)
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128101 |
Wang Dang-Chao(王党朝), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Lei Tian-Min(雷天民), Guo Hui(郭辉), Wang Yue-Hu(王悦湖), Tang Xiao-Yan(汤晓燕), and Wang Hang(王航) |
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Raman analysis of epitaxial graphene grown on 4H–SiC (0001) substrate under low pressure condition |
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Chin. Phys. B
2011 Vol.20 (12): 128101-128101
[Abstract]
(1466)
[HTML 1 KB]
[PDF 197 KB]
(1546)
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